AU/PT/TI/NI OHMIC CONTACTS TO P-ZNTE

被引：7

作者：

MOCHIZUKI, K

TERANO, A

MOMOSE, M

TAIKE, A

KAWATA, M

GOTOH, J

NAKATSUKA, S

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 23期

关键词：

OHMIC CONTACTS; II-VI SEMICONDUCTORS; OPTOELECTRONIC DEVICES;

D O I：

10.1049/el:19941326

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ohmic contacts of Au/Pt/Ti/Ni to p-ZnTe show a minimum specific contact resistance of 10(-6)OMEGAcm2 for a p-type doping level of 3 x 10(19)cm-3 and at an annealing temperature of 300-degrees-C. The Ni and Ti layers are very effective in improving the electrical properties of these contacts.

引用

页码：1984 / 1985

页数：2