AN ALTERNATIVE APPROACH TO EXCITON BINDING-ENERGY IN A GAAS-ALXGAL-X AS QUANTUM

被引：68

作者：

JIANG, TF ^{[1
]}

机构：

[1] NATL TSINGHUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN

来源：

SOLID STATE COMMUNICATIONS | 1984年 / 50卷 / 07期

关键词：

D O I：

10.1016/0038-1098(84)90135-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：589 / 593

页数：5

共 18 条

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[2] CASEY HC, 1978, HETEROSTRUCTURE LA A, P192
[3] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
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[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[4] DIRECT OBSERVATION OF SUPERLATTICE FORMATION IN A SEMICONDUCTOR HETEROSTRUCTURE
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[J]. PHYSICAL REVIEW LETTERS, 1975, 34 (21) : 1327 - 1330
[5] DINGLE R, 1976, 13TH P INT C PHYS SE
[6] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION
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REZEK, EA
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[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 295 - 297
[7] BINDING-ENERGIES OF WANNIER EXCITONS IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES
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BAJAJ, KK
[J]. SOLID STATE COMMUNICATIONS, 1983, 45 (09) : 831 - 835
[8] BANDFILLING IN METALORGANIC CHEMICAL VAPOR-DEPOSITED ALXGA1-XAS-GAAS-ALXGA1-XAS QUANTUM-WELL HETEROSTRUCTURE LASERS
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REZEK, EA
CHIN, R
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DAPKUS, PD
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (11) : 5392 - 5397
[9] ON THE INTERFACE CONNECTION RULES FOR EFFECTIVE-MASS WAVE-FUNCTIONS AT AN ABRUPT HETEROJUNCTION BETWEEN 2 SEMICONDUCTORS WITH DIFFERENT EFFECTIVE MASS
KROEMER, H
ZHU, QG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 551 - 553
[10] VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS
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[J]. PHYSICAL REVIEW B, 1971, 4 (10): : 3460 - &

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