DETECTION OF OPTICAL-EMISSION FROM INSB INDUCED BY PULSED LASER EVAPORATION

[1] GROWTH OF HGCDTE FILMS BY LASER-INDUCED EVAPORATION AND DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 182 - 186

[2] HETEROEPITAXIAL GROWTH OF CDTE ON GAAS BY LASER ASSISTED DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 462 - 464

[3] CHEUNG JT, 1984, MATER RES SOC S P, V29, P301

[4] EPITAXIAL-GROWTH OF (100) CDTE ON (100) GAAS INDUCED BY PULSED LASER EVAPORATION [J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1081 - 1083

[5] DYNAMICS OF LASER-INDUCED VAPORIZATION FOR ULTRAFAST DEPOSITION OF AMORPHOUS-SILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 385 - 387

[6] LUBBEN D, 1984, MATER RES SOC S P, V29, P359

[7] THERMAL AND PULSED LASER EVAPORATION OF SINGLE-PHASE ASXP1-X ALLOYS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 952 - 954

[8] ZAKHAROV VP, 1972, SOV PHYS-TECH PHYS, V17, P528

[1] GROWTH OF HGCDTE FILMS BY LASER-INDUCED EVAPORATION AND DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 182 - 186

[2] HETEROEPITAXIAL GROWTH OF CDTE ON GAAS BY LASER ASSISTED DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 43 (05) : 462 - 464

[3] CHEUNG JT, 1984, MATER RES SOC S P, V29, P301

[4] EPITAXIAL-GROWTH OF (100) CDTE ON (100) GAAS INDUCED BY PULSED LASER EVAPORATION [J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1081 - 1083

[5] DYNAMICS OF LASER-INDUCED VAPORIZATION FOR ULTRAFAST DEPOSITION OF AMORPHOUS-SILICON FILMS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 385 - 387

[6] LUBBEN D, 1984, MATER RES SOC S P, V29, P359

[7] THERMAL AND PULSED LASER EVAPORATION OF SINGLE-PHASE ASXP1-X ALLOYS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 952 - 954

[8] ZAKHAROV VP, 1972, SOV PHYS-TECH PHYS, V17, P528