THE GROWTH OF THIN, HEAVILY DOPED LAYERS FOR HOT-ELECTRON DEVICES

被引：4

作者：

HARRIS, JJ

WOODCOCK, JM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：196 / 198

页数：3

共 8 条

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[8] TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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