THICKNESS OF P/N JUNCTION SPACE-CHARGE LAYERS

被引:49
作者
LIOU, JJ [1 ]
LINDHOLM, FA [1 ]
机构
[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611
关键词
D O I
10.1063/1.342505
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1249 / 1253
页数:5
相关论文
共 15 条
[1]  
Burden RL., 1985, NUMERICAL ANAL
[2]   TRANSITION REGION CAPACITANCE OF DIFFUSED P-N JUNCTIONS [J].
CHAWLA, BR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (03) :178-&
[3]   PARTITIONED-CHARGE-BASED MODELING OF BIPOLAR-TRANSISTORS FOR NON-QUASI-STATIC CIRCUIT SIMULATION [J].
FOSSUM, JG ;
VEERARAGHAVAN, S .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :652-654
[4]  
JEONG HG, 1987, IEEE T ELECTRON DEV, V34, P898, DOI 10.1109/T-ED.1987.23013
[5]   QUASISTATIC CAPACITANCE OF P/N JUNCTION SPACE-CHARGE LAYERS BY THE LEIBNITZ RULE [J].
LINDHOLM, FA ;
LIOU, JJ .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) :561-564
[7]   FORWARD-VOLTAGE CAPACITANCE AND THICKNESS OF P-N-JUNCTION SPACE-CHARGE REGIONS [J].
LIOU, JJ ;
LINDHOLM, FA ;
PARK, JS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (07) :1571-1579
[8]   IMPROVED FORWARD-VOLTAGE P/N JUNCTION SPACE-CHARGE REGION CAPACITANCE BASED ON TIME-DOMAIN REASONING [J].
LIOU, JJ ;
LINDHOLM, FA .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :565-568
[9]   ELECTRICAL-CURRENT AND CARRIER DENSITY IN DEGENERATE MATERIALS WITH NONUNIFORM BAND-STRUCTURE [J].
MARSHAK, AH ;
VANVLIET, CM .
PROCEEDINGS OF THE IEEE, 1984, 72 (02) :148-164
[10]   POTENTIAL DISTRIBUTION AND CAPACITANCE OF A GRADED P-N JUNCTION [J].
MORGAN, SP ;
SMITS, FM .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (06) :1573-1602