EQUIVALENCE BETWEEN INTERFACE TRAPS IN SIO2/SI GENERATED BY RADIATION-DAMAGE AND HOT-ELECTRON INJECTION

被引：24

作者：

NISHIOKA, Y

DASILVA, EF

MA, TP

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 09期

关键词：

D O I：

10.1063/1.99358

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：720 / 722

页数：3

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