SIMS ANALYSIS USING EJECTED CSX+ IONS

被引：11

作者：

THOMAS, EW ^{[1
]}

TORABI, A ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,RES INST,ATLANTA,GA 30332

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 73卷 / 02期

关键词：

D O I：

10.1016/0168-583X(93)95737-P

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A structure consisting of Ge/Pd/GaAs is analyzed with the SIMS technique using a Cs+ probe. Comparison is made between the signals of ejected ions X+ and ejected diatomics CsX+. It is proposed that CsX+ is formed by an ion molecule reaction between emerging sputtered neutral X and surface Cs+. Depth profiles of Ge, Pd, Ga and As monitored by the species CsX+ are shown to be free of matrix effects at interfaces and the species exhibit approximately equal detection efficiencies. Use of the CsX+ signals to study an annealed Ge/Pd/GaAs structure clearly shows the segregation of Ge to the GaAs interface.

引用

收藏

页码：214 / 220

页数：7

相关论文

共 15 条

[1]

Albritton D.J., 1978, ATOM DATA NUCL DATA, V22, P1, DOI [DOI 10.1016/0092-640X(78)90027-X, 10.1016/0092-640X(78)90027-X]

[2] CLASSICAL THEORY OF ION-MOLECULE REARRANGEMENT COLLISIONS AT HIGH IMPACT ENERGIES [J].

BATES, DR ;

COOK, CJ ;

SMITH, FJ .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 83 (5311) :49-+

[3] A COMPARATIVE-STUDY OF SIMS DEPTH PROFILING OF BORON IN SILICON [J].

CLEGG, JB ;

MORGAN, AE ;

DEGREFTE, HAM ;

SIMONDET, F ;

HUBER, A ;

BLACKMORE, G ;

DOWSETT, MG ;

SYKES, DE ;

MAGEE, CW ;

DELINE, VR .

SURFACE AND INTERFACE ANALYSIS, 1984, 6 (04) :162-166

[4] SPUTTERING OF THE GALLIUM-INDIUM EUTECTIC ALLOY IN THE LIQUID-PHASE [J].

DUMKE, MF ;

TOMBRELLO, TA ;

WELLER, RA ;

HOUSLEY, RM ;

CIRLIN, EH .

SURFACE SCIENCE, 1983, 124 (2-3) :407-422

[5] A NEW SECONDARY ION MASS-SPECTROMETRY TECHNIQUE FOR III-V SEMICONDUCTOR COMPOUNDS USING THE MOLECULAR-IONS CSM [J].

GAO, Y .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3760-3762

[6] SIMS DEPTH PROFILE ANALYSIS USING MCS+ MOLECULAR-IONS [J].

GNASER, H ;

OECHSNER, H .

FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1991, 341 (1-2) :54-56

[7] ON THE USE OF CSX+ CLUSTER IONS FOR MAJOR ELEMENT DEPTH PROFILING IN SECONDARY ION MASS-SPECTROMETRY [J].

MAGEE, CW ;

HARRINGTON, WL ;

BOTNICK, EM .

INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1990, 103 (01) :45-56

[8] NONALLOYED OHMIC CONTACTS TO N-GAAS BY SOLID-PHASE EPITAXY OF GE [J].

MARSHALL, ED ;

ZHANG, B ;

WANG, LC ;

JIAO, PF ;

CHEN, WX ;

SAWADA, T ;

LAU, SS ;

KAVANAGH, KL ;

KUECH, TF .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (03) :942-947

[9] GE REDISTRIBUTION IN SOLID-PHASE GE/PD/GAAS OHMIC CONTACT FORMATION [J].

PALMSTROM, CJ ;

SCHWARZ, SA ;

YABLONOVITCH, E ;

HARBISON, JP ;

SCHWARTZ, CL ;

FLOREZ, LT ;

GMITTER, TJ ;

MARSHALL, ED ;

LAU, SS .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :334-339

[10] SOLID-PHASE REGROWTH OF COMPOUND SEMICONDUCTORS BY REACTION-DRIVEN DECOMPOSITION OF INTERMEDIATE PHASES [J].

SANDS, T ;

MARSHALL, ED ;

WANG, LC .

JOURNAL OF MATERIALS RESEARCH, 1988, 3 (05) :914-921