UNIFORMITY OF QUANTUM EFFICIENCY OF SINGLE AND TRAP-CONFIGURED SILICON PHOTODIODES

被引：14

作者：

WHITE, MG

BITTAR, A

机构：

[1] Measurement Standards Laboratory, New Zealand Institute for Industrial Research and Development, Lower Hutt

来源：

METROLOGIA | 1993年 / 30卷 / 04期

关键词：

D O I：

10.1088/0026-1394/30/4/026

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have carried out high resolution spatial measurements of the surface reflectance and responsivity of single and trap-configured silicon photodiodes at laser wavelengths between 325 nm and 780 nm. The results indicate that the spatial nonuniformity of quantum efficiency for a given photodiode varies with laser wavelength and internal structure. For radiometric quality diodes this nonuniformity of response leads to uncertainties in detector measurements which can be reduced to 0,03 % or better.

引用

页码：361 / 364

页数：4