DEFORMATION POTENTIALS AND INTERNAL STRAIN PARAMETER OF SILICON

[1] ANDERSEN OK, 1975, PHYS REV B, V12, P2060

[2] BACHELET GB, UNPUB

[3] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &

[4] CARDONA M, COMMUNICATION

[5] CARDONA M, 1982, TOPICS APPLIED PHYSI, V50

[6] FORCE THEOREM AND ELASTIC-CONSTANTS OF SOLIDS [J]. SOLID STATE COMMUNICATIONS, 1984, 49 (07) : 701 - 705

[7] CHRISTENSEN NE, PHYS REV B

[8] DETERMINATION OF INTERNAL STRAIN TENSORS BY ENERGY-DISPERSIVE X-RAY-DIFFRACTION - RESULTS FOR SI USING THE 006 FORBIDDEN REFLECTION [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1982, 15 (APR) : 154 - 159

[9] DAMOUR H, 1982, J APPL CRYSTALLOGR, V15, P148, DOI 10.1107/S0021889882011698

[10] SELF-CONSISTENT ELECTRONIC-STRUCTURE OF SI, GE AND DIAMOND BY THE LMTO-ASA METHOD [J]. SOLID STATE COMMUNICATIONS, 1980, 36 (05) : 403 - 406

[1] ANDERSEN OK, 1975, PHYS REV B, V12, P2060

[2] BACHELET GB, UNPUB

[3] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &

[4] CARDONA M, COMMUNICATION

[5] CARDONA M, 1982, TOPICS APPLIED PHYSI, V50

[6] FORCE THEOREM AND ELASTIC-CONSTANTS OF SOLIDS [J]. SOLID STATE COMMUNICATIONS, 1984, 49 (07) : 701 - 705

[7] CHRISTENSEN NE, PHYS REV B

[8] DETERMINATION OF INTERNAL STRAIN TENSORS BY ENERGY-DISPERSIVE X-RAY-DIFFRACTION - RESULTS FOR SI USING THE 006 FORBIDDEN REFLECTION [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1982, 15 (APR) : 154 - 159

[9] DAMOUR H, 1982, J APPL CRYSTALLOGR, V15, P148, DOI 10.1107/S0021889882011698

[10] SELF-CONSISTENT ELECTRONIC-STRUCTURE OF SI, GE AND DIAMOND BY THE LMTO-ASA METHOD [J]. SOLID STATE COMMUNICATIONS, 1980, 36 (05) : 403 - 406