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GAS-PHASE CHEMISTRY IN THE PROCESSING OF MATERIALS FOR THE SEMICONDUCTOR INDUSTRY
被引:19
作者
:
RYAN, KR
论文数:
0
引用数:
0
h-index:
0
RYAN, KR
PLUMB, IC
论文数:
0
引用数:
0
h-index:
0
PLUMB, IC
机构
:
来源
:
CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES
|
1988年
/ 15卷
/ 02期
关键词
:
D O I
:
10.1080/10408438808243737
中图分类号
:
O469 [凝聚态物理学];
学科分类号
:
070205 ;
摘要
:
引用
收藏
页码:153 / 200
页数:48
相关论文
共 191 条
[1]
THERMODYNAMICS OF THE SILICON-CHLORINE-HYDROGEN SYSTEM - CHEMICAL-POTENTIAL FOR HOMOGENEOUS NUCLEATION
[J].
ALLEN, KD
论文数:
0
引用数:
0
h-index:
0
ALLEN, KD
;
SAWIN, HH
论文数:
0
引用数:
0
h-index:
0
SAWIN, HH
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1986,
133
(02)
:421
-425
[2]
A KINETIC-MODEL FOR PLASMA-ETCHING SILICON IN A SF6/O2 RF DISCHARGE
[J].
ANDERSON, HM
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
ANDERSON, HM
;
MERSON, JA
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
MERSON, JA
;
LIGHT, RW
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
LIGHT, RW
.
IEEE TRANSACTIONS ON PLASMA SCIENCE,
1986,
14
(02)
:156
-164
[3]
ABSOLUTE RATE CONSTANTS FOR REACTIONS OF O(P-3) ATOMS AND OH RADICALS WITH SIH4 OVER TEMPERATURE-RANGE OF 297-438-DEGREES-K
[J].
ATKINSON, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF RIVERSIDE,STATEWIDE AIR POLLUT RES CTR,RIVERSIDE,CA 92502
UNIV CALIF RIVERSIDE,STATEWIDE AIR POLLUT RES CTR,RIVERSIDE,CA 92502
ATKINSON, R
;
PITTS, JN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF RIVERSIDE,STATEWIDE AIR POLLUT RES CTR,RIVERSIDE,CA 92502
UNIV CALIF RIVERSIDE,STATEWIDE AIR POLLUT RES CTR,RIVERSIDE,CA 92502
PITTS, JN
.
INTERNATIONAL JOURNAL OF CHEMICAL KINETICS,
1978,
10
(11)
:1151
-1160
[4]
RATE CONSTANTS FOR REACTIONS OF HYDROGEN-ATOMS WITH SOME SILANES AND GERMANES
[J].
AUSTIN, ER
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT CHEM,DAVEY LAB,UNIVERSITY PK,PA 16802
PENN STATE UNIV,DEPT CHEM,DAVEY LAB,UNIVERSITY PK,PA 16802
AUSTIN, ER
;
LAMPE, FW
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT CHEM,DAVEY LAB,UNIVERSITY PK,PA 16802
PENN STATE UNIV,DEPT CHEM,DAVEY LAB,UNIVERSITY PK,PA 16802
LAMPE, FW
.
JOURNAL OF PHYSICAL CHEMISTRY,
1977,
81
(12)
:1134
-1138
[5]
CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
;
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GILBERT, SL
.
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
:284
-289
[6]
MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(09)
:1473
-&
[7]
TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
:317
-320
[8]
METAL ORGANIC VAPOR-PHASE EPITAXY OF INDIUM-PHOSPHIDE
[J].
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
BASS, SJ
;
PICKERING, C
论文数:
0
引用数:
0
h-index:
0
PICKERING, C
;
YOUNG, ML
论文数:
0
引用数:
0
h-index:
0
YOUNG, ML
.
JOURNAL OF CRYSTAL GROWTH,
1983,
64
(01)
:68
-75
[9]
DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE
[J].
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
BASS, SJ
.
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
:172
-178
[10]
Bauerle Dieter W., 1984, LASER PROCESSING DIA, P166
←
1
2
3
4
5
6
7
8
9
10
→
共 191 条
[1]
THERMODYNAMICS OF THE SILICON-CHLORINE-HYDROGEN SYSTEM - CHEMICAL-POTENTIAL FOR HOMOGENEOUS NUCLEATION
[J].
ALLEN, KD
论文数:
0
引用数:
0
h-index:
0
ALLEN, KD
;
SAWIN, HH
论文数:
0
引用数:
0
h-index:
0
SAWIN, HH
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1986,
133
(02)
:421
-425
[2]
A KINETIC-MODEL FOR PLASMA-ETCHING SILICON IN A SF6/O2 RF DISCHARGE
[J].
ANDERSON, HM
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
ANDERSON, HM
;
MERSON, JA
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
MERSON, JA
;
LIGHT, RW
论文数:
0
引用数:
0
h-index:
0
机构:
SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
SANDIA NATL LABS, ALBUQUERQUE, NM 87185 USA
LIGHT, RW
.
IEEE TRANSACTIONS ON PLASMA SCIENCE,
1986,
14
(02)
:156
-164
[3]
ABSOLUTE RATE CONSTANTS FOR REACTIONS OF O(P-3) ATOMS AND OH RADICALS WITH SIH4 OVER TEMPERATURE-RANGE OF 297-438-DEGREES-K
[J].
ATKINSON, R
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF RIVERSIDE,STATEWIDE AIR POLLUT RES CTR,RIVERSIDE,CA 92502
UNIV CALIF RIVERSIDE,STATEWIDE AIR POLLUT RES CTR,RIVERSIDE,CA 92502
ATKINSON, R
;
PITTS, JN
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF RIVERSIDE,STATEWIDE AIR POLLUT RES CTR,RIVERSIDE,CA 92502
UNIV CALIF RIVERSIDE,STATEWIDE AIR POLLUT RES CTR,RIVERSIDE,CA 92502
PITTS, JN
.
INTERNATIONAL JOURNAL OF CHEMICAL KINETICS,
1978,
10
(11)
:1151
-1160
[4]
RATE CONSTANTS FOR REACTIONS OF HYDROGEN-ATOMS WITH SOME SILANES AND GERMANES
[J].
AUSTIN, ER
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT CHEM,DAVEY LAB,UNIVERSITY PK,PA 16802
PENN STATE UNIV,DEPT CHEM,DAVEY LAB,UNIVERSITY PK,PA 16802
AUSTIN, ER
;
LAMPE, FW
论文数:
0
引用数:
0
h-index:
0
机构:
PENN STATE UNIV,DEPT CHEM,DAVEY LAB,UNIVERSITY PK,PA 16802
PENN STATE UNIV,DEPT CHEM,DAVEY LAB,UNIVERSITY PK,PA 16802
LAMPE, FW
.
JOURNAL OF PHYSICAL CHEMISTRY,
1977,
81
(12)
:1134
-1138
[5]
CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
BAN, VS
;
GILBERT, SL
论文数:
0
引用数:
0
h-index:
0
机构:
RCA LABS,PRINCETON,NJ 08540
RCA LABS,PRINCETON,NJ 08540
GILBERT, SL
.
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
:284
-289
[6]
MASS SPECTROMETRIC STUDIES OF VAPOR PHASE CRYSTAL GROWTH .1. GAASXP1-X SYSTEM (0 LESS THAN OR EQUAL TO X LESS THAN OR EQUAL TO 1)
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(09)
:1473
-&
[7]
TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS
[J].
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
:317
-320
[8]
METAL ORGANIC VAPOR-PHASE EPITAXY OF INDIUM-PHOSPHIDE
[J].
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
BASS, SJ
;
PICKERING, C
论文数:
0
引用数:
0
h-index:
0
PICKERING, C
;
YOUNG, ML
论文数:
0
引用数:
0
h-index:
0
YOUNG, ML
.
JOURNAL OF CRYSTAL GROWTH,
1983,
64
(01)
:68
-75
[9]
DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE
[J].
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
BASS, SJ
.
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
:172
-178
[10]
Bauerle Dieter W., 1984, LASER PROCESSING DIA, P166
←
1
2
3
4
5
6
7
8
9
10
→