A THEORY OF SHOT NOISE IN QUANTUM-WELLS AND APPLICATIONS IN RESONANT TUNNELING HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：10

作者：

HAN, J ^{[1
]}

BARNES, FS ^{[1
]}

机构：

[1] UNIV COLORADO,DEPT ELECT & COMP ENGN,BOULDER,CO 80309

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/16.69900

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Theoretical calculations of shot noise are carried out on a double-barrier, one-well structure. The results show that the noise power is a function of the energy bandwidth of the transmitted electrons and that the shot noise may be significantly reduced by the quantum wells. These results can be applied to heterojunction bipolar transistors which contain a quantum well, and it is shown that these resonant tunneling heterojunction bipolar transistors (RTHBT's) should have a lower noise figure than homojunction transistors.

引用

页码：237 / 241

页数：5

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