BUFFER LAYERS OF YTTRIA-STABILIZED ZIRCONIA FOR YBA2CU3O7 DEVICES ON SILICON SUBSTRATES

被引:3
作者
GOERKE, F
SCHILLING, M
机构
[1] Universität Hamburg, Institut für Angewandte Physik, D-2000 Hamburg 36
关键词
D O I
10.1016/0925-8388(93)90724-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The preparation of high quality YBa2Cu3O7 films on Si(100) is essential for devices on this important substrate material. Interdiffusion, lattice mismatch and different thermal expansion coefficients make the use of buffer layers necessary for the growth of YBa2Cu3O7 On Si(100). Yttria stabilized zirconia (YSZ) has been proven to be suitable for this purpose. We investigate the growth of YSZ films on Si(100) substrates by pulsed laser deposition with a KrF excimer laser. The YSZ films are characterized by X-ray scattering, ellipsometry and scanning electron microscopy. On these buffer layers YBa2Cu3O7 films are prepared in-situ by laser deposition. While the critical temperatures T(c,0) are above 85 K, the critical current densities j, are still degraded compared to the films on SrTiO3 substrates. We report on the dependence of the superconducting and morphological properties of the YBa2Cu3O7 films on the deposition parameters.
引用
收藏
页码:219 / 222
页数:4
相关论文
共 11 条
[1]   CHARACTERIZATION OF DIFFERENT (ME,ZR)O2 SINGLE-CRYSTALS GROWN BY THE SKULL-MELTING TECHNIQUE [J].
BAERMANN, A ;
GUSE, W ;
SAALFELD, H .
JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :331-335
[2]   EFFECT OF SMALL CHANGES IN COMPOSITION ON THE ELECTRICAL AND STRUCTURAL-PROPERTIES OF YBA2CU3O7 THIN-FILMS [J].
CHEW, NG ;
GOODYEAR, SW ;
EDWARDS, JA ;
SATCHELL, JS ;
BLENKINSOP, SE ;
HUMPHREYS, RG .
APPLIED PHYSICS LETTERS, 1990, 57 (19) :2016-2018
[3]   HIGH CRITICAL CURRENTS IN Y-BA-CU-O FILMS ON SILICON USING YSZ BUFFER LAYERS [J].
FENNER, DB ;
FORK, DK ;
CONNELL, GAN ;
BOYCE, JB ;
VIANO, AM ;
GEBALLE, TH .
IEEE TRANSACTIONS ON MAGNETICS, 1991, 27 (02) :958-965
[4]   HIGH CRITICAL CURRENTS IN STRAINED EPITAXIAL YBA2CU3O7-DELTA ON SI [J].
FORK, DK ;
FENNER, DB ;
BARTON, RW ;
PHILLIPS, JM ;
CONNELL, GAN ;
BOYCE, JB ;
GEBALLE, TH .
APPLIED PHYSICS LETTERS, 1990, 57 (11) :1161-1163
[5]   GROWTH-MECHANISM OF SPUTTERED FILMS OF YBA2CU3O7 STUDIED BY SCANNING TUNNELING MICROSCOPY [J].
HAWLEY, M ;
RAISTRICK, ID ;
BEERY, JG ;
HOULTON, RJ .
SCIENCE, 1991, 251 (5001) :1587-1589
[6]   EPITAXIAL YBA2CU3O7-DELTA FILMS ON SILICON USING COMBINED YSZ/Y2O3 BUFFER LAYERS - A COMPREHENSIVE STUDY [J].
PRUSSEIT, W ;
CORSEPIUS, S ;
ZWERGER, M ;
BERBERICH, P ;
KINDER, H ;
EIBL, O ;
JAEKEL, C ;
BREUER, U ;
KURZ, H .
PHYSICA C, 1992, 201 (3-4) :249-256
[7]   OPTIMIZATION OF THE IN SITU PROCESS FOR YBA2CU3OX FILMS PREPARED BY LASER ABLATION [J].
SCHILLING, M ;
LAUE, KD ;
MERKT, U .
JOURNAL OF THE LESS-COMMON METALS, 1990, 164 :400-406
[8]   YBA2CU3OX - MICROSTRUCTURES ON SEMICONDUCTOR SUBSTRATES [J].
SCHILLING, M ;
MERKT, U .
IEEE TRANSACTIONS ON MAGNETICS, 1991, 27 (02) :1630-1633
[9]  
SCHILLING M, HIGH TC SUPERCONDUCT, P535
[10]  
SCHILLING M, IN PRESS P APPLIED S