HIGH CRITICAL CURRENTS IN Y-BA-CU-O FILMS ON SILICON USING YSZ BUFFER LAYERS

被引:14
作者
FENNER, DB
FORK, DK
CONNELL, GAN
BOYCE, JB
VIANO, AM
GEBALLE, TH
机构
[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
[2] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305
[3] UNIV SANTA CLARA,DEPT PHYS,SANTA CLARA,CA 95053
基金
美国国家科学基金会;
关键词
D O I
10.1109/20.133340
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Exceptionally high quality films of Y1Ba2Cu3O7-x (YBCO) were successfully grown epitaxially on Si(100) wafers with a buffer layer of yttria-stabilized zirconia (YSZ) using a fully in-situ pulsed laser deposition (PLD) process. Critical current densities of a 30-nm thick film are 2x10(7) at 4.2 K and 2.2x10(6) at 77 K. Zero-resistance critical temperatures are about 87 K, the transition width is 1 K, and normal-state resistivity is 0.28 m0hm-cm at 300 K. X-ray diffraction phi scans indicate in-plane epitaxial alignment within 1.0 and 2.0-degrees, for the YSZ and YBCO respectively. Lattice constant and thermal expansion mismatches occur at both subsurface interfaces. This causes strain cracks to occur in YBCO films thicker than about 50 nm. The Si surface preparation utilizes an oxide etch and hydrogen termination that is an essential step in the process, as is careful control of the deposition environment temperature and oxygen pressure. Here we describe the crystallographic and chemical structure of the interfaces and their role in film formation. The crystal quality of YSZ buffer layers on Si is not degraded by decomposition reactions, as is YBCO directly on Si or SiO2, and cube-on-cube orientation of the YSZ cubic fluorite on Si(100) surfaces can be made to occur very effectively.
引用
收藏
页码:958 / 965
页数:8
相关论文
共 23 条
  • [1] LOW-TEMPERATURE PREPARATION OF SUPERCONDUCTING YBA2CU3O7-DELTA FILMS ON SI, MGO, AND SRTIO3 BY THERMAL COEVAPORATION
    BERBERICH, P
    TATE, J
    DIETSCHE, W
    KINDER, H
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (10) : 925 - 926
  • [2] SILICON SURFACE PASSIVATION FOR HETEROEPITAXY BY HYDROGEN TERMINATION
    FENNER, DB
    BIEGELSEN, DK
    BRINGANS, RD
    KRUSOR, BS
    [J]. CHEMISTRY AND DEFECTS IN SEMICONDUCTOR HETEROSTRUCTURES, 1989, 148 : 279 - 284
  • [3] DEPOSITION AND CHARACTERIZATION OF Y-BA-CU-O THIN-FILMS ON SILICON SUBSTRATES - INTERFACE ANALYSIS
    FENNER, DB
    FORK, DK
    BOYCE, JB
    CONNELL, GAN
    VIANO, AM
    [J]. PHYSICA C, 1989, 162 : 141 - 142
  • [4] SILICON SURFACE PASSIVATION BY HYDROGEN TERMINATION - A COMPARATIVE-STUDY OF PREPARATION METHODS
    FENNER, DB
    BIEGELSEN, DK
    BRINGANS, RD
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (01) : 419 - 424
  • [5] FENNER DB, IN PRESS MATER RES S, V169
  • [6] FENNER DB, IN PRESS MATER RES S, V191
  • [7] FENNER DB, 1990, B AM PHYS SOC, V35, P328
  • [8] FENNER DB, UNPUB REACTIONS INTE
  • [9] HIGH CRITICAL CURRENTS IN STRAINED EPITAXIAL YBA2CU3O7-DELTA ON SI
    FORK, DK
    FENNER, DB
    BARTON, RW
    PHILLIPS, JM
    CONNELL, GAN
    BOYCE, JB
    GEBALLE, TH
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (11) : 1161 - 1163
  • [10] EPITAXIAL YTTRIA-STABILIZED ZIRCONIA ON HYDROGEN-TERMINATED SI BY PULSED LASER DEPOSITION
    FORK, DK
    FENNER, DB
    CONNELL, GAN
    PHILLIPS, JM
    GEBALLE, TH
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (11) : 1137 - 1139