LINE-WIDTH OF INTER-SUBBAND ABSORPTION IN INVERSION-LAYERS - SCATTERING FROM CHARGED IONS

被引：45

作者：

ANDO, T

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1985年 / 54卷 / 07期

关键词：

D O I：

10.1143/JPSJ.54.2671

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：2671 / 2675

页数：5

相关论文

共 13 条

[1] BROADENING OF INTER-SUBBAND TRANSITIONS IN IMAGE-POTENTIAL-INDUCED SURFACE-STATES OUTSIDE LIQUID-HELIUM
ANDO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 44 (03) : 765 - 773
[2] LINESHAPE OF INTER-SUBBAND OPTICAL-TRANSITIONS IN SPACE-CHARGE LAYERS
ANDO, T
[J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1976, 24 (01): : 33 - 39
[3] DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE ON SEMICONDUCTOR SURFACES
ANDO, T
[J]. SURFACE SCIENCE, 1976, 58 (01) : 128 - 134
[4] DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE IN ACCUMULATION AND INVERSION LAYERS
ANDO, T
[J]. PHYSICAL REVIEW B, 1976, 13 (08): : 3468 - 3477
[5] SCREENING EFFECT AND QUANTUM TRANSPORT IN A SILICON INVERSION LAYER IN STRONG MAGNETIC-FIELDS
ANDO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (05) : 1616 - 1626
[6] TEMPERATURE-DEPENDENCE OF SCATTERING IN THE INVERSION LAYER
HARTSTEIN, A
FOWLER, AB
ALBERT, M
[J]. SURFACE SCIENCE, 1980, 98 (1-3) : 181 - 190
[7] ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS
HARTSTEIN, A
NING, TH
FOWLER, AB
[J]. SURFACE SCIENCE, 1976, 58 (01) : 178 - 181
[8] Matsumoto Y., 1974, JPN J APPL PHYS PT 2, V2-2, P367
[9] MAZURE C, UNPUB
[10] INTERSUBBAND SPECTROSCOPY OF INVERSION-LAYERS IN THE PRINCIPAL SURFACES OF SILICON - MANY-BODY AND IMPURITY EFFECTS
MCCOMBE, BD
COLE, T
[J]. SURFACE SCIENCE, 1980, 98 (1-3) : 469 - 480