DIAMOND-LIKE CARBON-FILMS ON SEMICONDUCTORS FOR INSULATED-GATE TECHNOLOGY

被引：14

作者：

KAPOOR, VJ ^{[1
]}

MIRTICH, MJ ^{[1
]}

BANKS, BA ^{[1
]}

机构：

[1] NASA, LEWIS RES CTR, CLEVELAND, OH 44135 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573442

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1013 / 1017

页数：5

共 14 条

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[2]

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[3]

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[5] HIGH-FREQUENCY CAPACITANCE-VOLTAGE AND CONDUCTANCE-VOLTAGE CHARACTERISTICS OF DC-SPUTTER DEPOSITED A-CARBON SILICON MIS STRUCTURES [J].

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[6] SUMMARY ABSTRACT - CHARACTERIZATION OF ION-BEAM DEPOSITED DIAMONDLIKE CARBON COATING ON SEMICONDUCTORS [J].

KOEPPE, PV ;

KAPOOR, VJ ;

MIRTICH, MJ ;

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[7]

MIRTICH MJ, 1984, 11TH INT C MET COAT

[8]

MIRTICH MJ, 1985, UNPUB 12TH INT C MET

[9]

POUCH JJ, 1985, NASA86995 TECHN MEM

[10] ION-BEAM-DEPOSITED POLYCRYSTALLINE DIAMONDLIKE FILMS [J].

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