TRANSITION OF A SI-AS SOLUTION TO THE AMORPHOUS PHASE INDUCED BY PULSED-LASER QUENCHING

被引：9

作者：

BAERI, P

REITANO, R

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.39.13231

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：13231 / 13240

页数：10

共 29 条

[21] SOME THERMODYNAMIC PROPERTIES OF AMORPHOUS SI [J].

POATE, JM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :211-217

[22] EXCESS FREE ENERGIES IN GE, SI AND GA BINARY SYSTEMS - ALPHA-PARAMETER APPROACH [J].

RAO, MV ;

TILLER, WA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (02) :191-&

[23]

Spaepen F., 1982, LASER ANNEALING SEMI

[24] SILICON MELT, REGROWTH, AND AMORPHIZATION VELOCITIES DURING PULSED LASER IRRADIATION [J].

THOMPSON, MO ;

MAYER, JW ;

CULLIS, AG ;

WEBBER, HC ;

CHEW, NG ;

POATE, JM ;

JACOBSON, DC .

PHYSICAL REVIEW LETTERS, 1983, 50 (12) :896-899

[25] MELTING TEMPERATURE AND EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON DURING PULSED LASER IRRADIATION [J].

THOMPSON, MO ;

GALVIN, GJ ;

MAYER, JW ;

PEERCY, PS ;

POATE, JM ;

JACOBSON, DC ;

CULLIS, AG ;

CHEW, NG .

PHYSICAL REVIEW LETTERS, 1984, 52 (26) :2360-2363

[26] EQUILIBRIUM THERMOCHEMISTRY OF SOLID AND LIQUID ALLOYS OF GERMANIUM AND OF SILICON .1. THE SOLUBILITY OF GE AND SI IN ELEMENTS OF GROUP-III, GROUP-IV AND GROUP-V [J].

THURMOND, CD .

JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) :827-830

[27]

TURNBULL D, 1986, BEAM SOLID INTERACTI, V51, P71

[28]

Von Allmen MF, 1982, LASER ANNEALING SEMI

[29]

WHITE CW, 1980, LASER ELECTRON BEAM, P111

← 1 2 3 →