SOME THERMODYNAMIC PROPERTIES OF AMORPHOUS SI

被引：23

作者：

POATE, JM

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90802-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：211 / 217

页数：7

共 25 条

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[4]

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[7] ULTRARAPID CRYSTAL-GROWTH AND IMPURITY SEGREGATION IN AMORPHOUS-SILICON ANNEALED WITH SHORT Q-SWITCHED LASER-PULSES [J].

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[8]

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[9] TRANSITION-TEMPERATURES AND HEATS OF CRYSTALLIZATION OF AMORPHOUS GE,SI, AND GE1-XSIX ALLOYS DETERMINED BY SCANNING CALORIMETRY [J].

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[10]

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