USE OF MEMN(CO)5 IN THE LOW-TEMPERATURE MOCVD GROWTH OF MN CONTAINING ALLOYS

被引：21

作者：

PAIN, GN

BHARATULA, N

CHRISTIANSZ, GI

KIBEL, MH

KWIETNIAK, MS

SANDFORD, C

WARMINSKI, T

DICKSON, RS

ROWE, RS

MCGREGOR, K

DEACON, GB

WEST, BO

GLANVILL, SR

HAY, DG

ROSSOUW, CJ

STEVENSON, AW

机构：

[1] MONASH UNIV,DEPT CHEM,CLAYTON,VIC 3168,AUSTRALIA

[2] CSIRO,DIV MAT SCI & TECHNOL,CLAYTON,VIC 3168,AUSTRALIA

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

Organometallics - Semiconducting Gallium Arsenide - X-rays--Diffraction;

D O I：

10.1016/0022-0248(90)90967-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The new organometallic feedstock MeMn(CO)5 has been used for the MOCVD growth of Cd1-xMnxTe (111B) epilayers on GaAs (100) substrates. The epitaxial relationship was established by HRTEM and X-ray diffraction (XRD). The quaternary alloy Hg1-x-yCdxMnyTe was grown by in-situ annealing og HgTe overlayers on Cd1-xMnxTe epilayers. Adherent films of Hg1-xMnxTe on glass were grown by MOCVD. The electrical properties show semi-metal behaviour, and XRD and other properties indicate a zinc-blende structure. © 1989.

引用

页码：208 / 210

页数：3

共 12 条

[1] PRESSURE CONTROLLED VPE GROWTH OF QUATERNARY HG1-X-YCDXMNYTE EPITAXIAL LAYERS [J].