OPTICALLY PUMPED LASER OSCILLATION AT 3.82-MU-M FROM INAS1-XSBX GROWN BY MOLECULAR-BEAM EPITAXY ON GASB

被引：13

作者：

VANDERZIEL, JP ^{[1
]}

CHIU, TH ^{[1
]}

TSANG, WT ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.96355

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1139 / 1141

页数：3

共 16 条

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[8] LIQUID-PHASE EPITAXIAL-GROWTH OF INAS1-XSBX ON GASB [J].

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[9]

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[10]

HORIKOSHI Y, 1985, SEMICONDUCTORS SEMIM, P22

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