WIDE TERRACE FORMATION DURING METALORGANIC VAPOR-PHASE EPITAXY OF GAAS, ALAS, AND ALGAAS

被引：18

作者：

SHINOHARA, M

TANIMOTO, M

YOKOYAMA, H

INOUE, N

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 11期

关键词：

D O I：

10.1063/1.112069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs, Al0.35Ga0.65As, and AlAs surface terrace structures formed during metalorganic vapor phase epitaxy (MOVPE) on vicinal (001) surfaces are investigated. The minimal terrace width for two-dimensional (2-D) nucleation for AlGaAs is almost equal to that for GaAs. In contrast, for AlAs it is reduced and the growth mode becomes three dimensional at temperatures below 580-degrees-C. Monolayer step-flow growth without 2-D islands and terraces about 1 mum wide are obtained above 630-degrees-C for all materials. These results are very different from those by molecular beam epitaxy and suggest that MOVPE is superior to grow wide uniform heterointerfaces for GaAs/AlAs and GaAs/AlGaAs.

引用

页码：1418 / 1420

页数：3

共 8 条

[1] A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY OF (100) GAAS VICINAL SURFACES [J].