MORPHOLOGY ON GAAS-SURFACES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION AND MOLECULAR-BEAM EPITAXY

被引：13

作者：

IKUTA, K

OSAKA, J

YOKOYAMA, H

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 136卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90393-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The morphology on GaAs surfaces grown by metalorganic chemical vapor deposition (MOCVD) is observed using an atomic force microscope and the results are compared with those obtained for surfaces grown by molecular beam epitaxy (MBE). Monolayer steps on MOCVD-grown surfaces are observed for the first time. The largest terrace observed is 1 mum wide. This is one order of magnitude wider than those observed on MBE-grown surfaces under similar growth conditions. Surface undulation is less than that on the MBE-grown surface. Preliminary studies on surfaces grown by chemical beam epitaxy (CBE) show that terrace width and surface undulation are similar to those found on MBE-grown surfaces.

引用

页码：114 / 117

页数：4

共 5 条

[1]

OSAKA J, 1993, 12TH ALL SEM PHYS EL, P373

[2] ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY [J].