STRAINED-LAYER INGAAS QUANTUM-WELL LASERS EMITTING AT 1.5 MU-M GROWN BY CHEMICAL BEAM EPITAXY

被引：5

作者：

SUGIURA, H

NOGUCHI, Y

IGA, R

YAMADA, T

KAMADA, H

SAKAI, Y

YASAKA, H

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.108477

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Laser characteristics of double channel planar buried heterostructure lasers with InxGa1-xAs/InGaAsP multiquantum wells (MQW) fabricated by a combination of chemical beam epitaxy and liquid phase epitaxy are described for the InAs content x of the InxGa1-xAs ranging from 0.53 to 0.71. There is no discernible difference in the minority carrier lifetime of the unstrained and strained MQWs. All the lasers have almost the same threshold current of 15 +/- 1 mA. Characteristic temperature T0 is improved in the strained lasers; the laser with x=0.62 has a T0 of as high as 98 K at 900-mu-m cavity length. Resonance oscillation frequency f(r) increases with the InAs content, i.e., the amount of the compressive strain.

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收藏

页码：318 / 320

页数：3

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