LOW-THRESHOLD INGAAS/INGAASP MULTIPLE QUANTUM-WELL LASERS GROWN BY CHEMICAL BEAM EPITAXY

被引：4

作者：

YAMADA, T

IGA, R

NOGUCHI, Y

SUGIURA, H

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 10A期

关键词：

CBE; MQW; SCH; DCPBH; LASER; THRESHOLD CURRENT; EFFICIENCY;

D O I：

10.1143/JJAP.30.L1741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaAs/InGaAsP separate confinement heterostructure (SCH) multiple quantum well (MQW) lasers were successfully fabricated using chemical beam epitaxy (CBE) with a pressure-control system of gaseous sources. Grown films were processed into double-channel planar buried heterostructure (DCPBH) lasers of 1.5-mu-m stripe width with regrowth by liquid-phase epitaxy. The uncoated lasers were 300-mu-m long, and exhibited cw operation with a threshold current as low as 12 mA. About 90% of the lasers had a threshold current below 16 mA. The slope efficiency was 0.22 mW/mA and the characteristic temperature T0 was 60 K. The uniformity of the grown films and photoluminescence of the MQWs were also studied.

引用

收藏

页码：L1741 / L1743

页数：3

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