GAINAS/INP QUANTUM-WELLS AND STRAINED-LAYER SUPERLATTICES GROWN BY CHEMICAL BEAM EPITAXY

被引：6

作者：

UCHIDA, TK

UCHIDA, T

YOKOUCHI, N

KOYAMA, F

IGA, K

机构：

[1] Tokyo Institute of Technology, Midori-ku, Yokohama

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2B期

关键词：

QUANTUM WELLS; STRAINED LAYERS; CHEMICAL BEAM EPITAXY;

D O I：

10.1143/JJAP.30.L228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga(x)In(1-x)As/InP (0.2 less-than-or-equal-to x less-than-or-equaal-to 0.47) quantum wells were grown by chemical beam epitaxy. The thinnest well of two monolayers was obtained and confirmed by transmission electron microscope. Room temperature photoluminescence emission was observed from two-monolayer quantum wells which peaked at 1.0-mu-m. Strained quantum wells were grown with successive well thickness from 9 angstrom to 60 angstrom. By optimizing the growth sequence, we obtained a photoluminescence linewidth of 15 meV from 20 angstrom to 60 angstrom wells at 77 K.

引用

收藏

页码：L228 / L230

页数：3

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