HIGHLY BERYLLIUM-DOPED AND LATTICE-MATCHED GAINASP/INP GROWTH BY CHEMICAL BEAM EPITAXY (CBE)

被引：5

作者：

UCHIDA, TK

UCHIDA, T

MISE, K

KOYAMA, F

IGA, K

机构：

[1] Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 03期

关键词：

GalnAsP/InP growth by chemical beam epitax;

D O I：

10.1143/JJAP.29.562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly Be-doped (>1019 cm-3) 1.45 µm-wavelength GaInAsP was grown by chemical beam epitaxy with a solid Be source. The hole concentration for both GaInAsP and InP was linearly related to the Be effusion cell temperature. In spite of high doping levels, neither obvious lattice mismatch nor surface degradation was observed. A stripe contact laser was also successfully fabricated using the results obtained. © 1990 The Japan Society of Applied Physics.

引用

页码：562 / 563

页数：2

共 8 条

[1] MONOLITHIC INP/GAINAS PINFET RECEIVER USING MOMBE-GROWN CRYSTAL [J].

AKAHORI, Y ;

HATA, S ;

IKEDA, M ;

YUDA, M ;

KAWAGUCHI, Y ;

UEHARA, S .

ELECTRONICS LETTERS, 1989, 25 (01) :37-38

[2] SURFACE EMITTING SEMICONDUCTOR-LASERS [J].

IGA, K ;

KOYAMA, F ;

KINOSHITA, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) :1845-1855

[3] GAS SOURCE MBE GROWTH OF HIGH-QUALITY INP USING TRIETHYLINDIUM AND PHOSPHINE [J].

KAWAGUCHI, Y ;

ASAHI, H ;

NAGAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (04) :L221-L223

[4] GAS SOURCE MOLECULAR-BEAM EPITAXY OF GAXIN1-XPYAS1-Y [J].

PANISH, MB ;

SUMSKI, S .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3571-3576

[5] CHEMICAL BEAM EPITAXIALLY GROWN INP/INGAASP INTERFERENCE MIRROR FOR USE NEAR 1.55 MU-M WAVELENGTH [J].

TAI, K ;

MCCALL, SL ;

CHU, SNG ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1987, 51 (11) :826-827

[6] GAINAS-GAINASP-INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH VERY THIN BASE (150-A) GROWN BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT ;

LEVI, AFJ ;

BURKHARDT, EG .

APPLIED PHYSICS LETTERS, 1988, 53 (11) :983-985

[7] GROWTH OF INP, GAAS, AND IN0.53GA0.47AS BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :666-670

[8] DOPING STUDIES USING THERMAL BEAMS IN CHEMICAL-BEAM EPITAXY [J].

TSANG, WT ;

TELL, B ;

DITZENBERGER, JA ;

DAYEM, AH .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4182-4185

← 1 →