DOPING STUDIES USING THERMAL BEAMS IN CHEMICAL-BEAM EPITAXY

被引：31

作者：

TSANG, WT

TELL, B

DITZENBERGER, JA

DAYEM, AH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 12期

关键词：

D O I：

10.1063/1.337503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4182 / 4185

页数：4

共 16 条

[1]

AMBRIDGE T, 1980, J ELECTROCHEM SOC, V127, P22

[2] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :701-703

[3] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY [J].

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1733-1735

[4]

DAPKUS DP, 1982, ANN REV MATER SCI, V12, P243

[5]

DEVLIN WJ, 1979, I PHYS C SER, V45, P510

[6] BERYLLIUM-ION IMPLANTATION IN INP AND IN1-XGAXASYP1-Y [J].

DONNELLY, JP ;

ARMIENTO, CA .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :96-99

[7] VERY LOW THRESHOLD GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METAL ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1978, 32 (08) :473-475

[8] BERYLLIUM DOPING AND DIFFUSION IN MOLECULAR-BEAM EPITAXY OF GAAS AND ALXGA1-XAS [J].

ILEGEMS, M .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) :1278-1287

[9] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J].

JOHNSON, WC ;

PANOUSIS, PT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :965-&

[10] ELECTRICAL AND OPTICAL-PROPERTIES OF BE-DOPED INP GROWN BY MOLECULAR-BEAM EPITAXY [J].

KAWAMURA, Y ;

ASAHI, H ;

NAGAI, H .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :841-846

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