GAINAS-GAINASP-INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH VERY THIN BASE (150-A) GROWN BY CHEMICAL BEAM EPITAXY

被引：13

作者：

TSANG, WT ^{[1
]}

LEVI, AFJ ^{[1
]}

BURKHARDT, EG ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 11期

关键词：

D O I：

10.1063/1.100048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：983 / 985

页数：3

共 18 条

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[3]

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[5]

IZAWA T, 1985, DEC IEDM, P328

[6]

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[7] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

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[8]

Malik R. P., UNPUB

[9] GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (GAAS IBT) [J].

MATSUMOTO, K ;

HAYASHI, Y ;

HASHIZUME, N ;

YAO, T ;

KATO, M ;

MIYASHITA, T ;

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IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) :627-628

[10] HIGH-GAIN INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

NOTTENBURG, RN ;

TEMKIN, H ;

PANISH, MB ;

HAMM, RA .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1112-1114

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