ROOM-TEMPERATURE OBSERVATION OF EXCITONIC ABSORPTION IN GAXIN1-XAS/INP (0.2-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.47) QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY

被引：2

作者：

YOKOUCHI, N

UCHIDA, T

UCHIDA, T

MIYAMOTO, T

KOYAMA, F

IGA, K

机构：

[1] Tokyo Institute of Technology, Midori-ku, Yokohama

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 5B期

关键词：

EXCITONIC ABSORPTION; GAXIN1-XAS/INP QUANTUM WELLS; CHEMICAL BEAM EPITAXY;

D O I：

10.1143/JJAP.30.L885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ga(x)In(1-x)As/InP (0.2 less-than-or-equal-to x less-than-or-equal-to 0.47) lattice-matched and strained quantum wells having 10 wells were grown by chemical beam epitaxy (CBE). The absorption properties were investigated and excitonic absorption peaks were clearly observed at room temperature. The wavelengths of excitonic peaks were in good agreement with a theoretical estimation obtained by using effective mass approximation including heavy and light hole energy split at the GAMMA point.

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页码：L885 / L887

页数：3

相关论文

共 14 条

[1] ADMITTANCE SPECTROSCOPY MEASUREMENT OF BAND OFFSETS IN STRAINED LAYERS OF INXGA1-XAS GROWN ON INP [J].

CAVICCHI, RE ;

LANG, DV ;

GERSHONI, D ;

SERGENT, AM ;

VANDENBERG, JM ;

CHU, SNG ;

PANISH, MB .

APPLIED PHYSICS LETTERS, 1989, 54 (08) :739-741

[2] EXCITONIC TRANSITIONS IN STRAINED-LAYER INXGA1-XAS/INP QUANTUM WELLS [J].

GERSHONI, D ;

TEMKIN, H ;

PANISH, MB ;

HAMM, RA .

PHYSICAL REVIEW B, 1989, 39 (08) :5531-5534

[3]

KAN Y, 1987, IEEE J QUANTUM ELECT, V23, P2167

[4] HIGH-TEMPERATURE OBSERVATION OF HEAVY-HOLE AND LIGHT-HOLE EXCITONS IN INGAAS/INP MULTIPLE QUANTUM-WELL STRUCTURES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

KAWAGUCHI, Y ;

ASAHI, H .

APPLIED PHYSICS LETTERS, 1987, 50 (18) :1243-1245

[5]

Ravikumar K. G., 1989, Transactions of the Institute of Electronics, Information and Communication Engineers E, VE72, P384

[6] ROOM-TEMPERATURE EXCITONS IN GA0.47IN0.53AS-INP SUPERLATTICES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

NAGLE, J ;

MAUREL, P ;

OMNES, F ;

POCHOLLE, JP .

APPLIED PHYSICS LETTERS, 1986, 49 (17) :1110-1111

[7] IN GAAS/INP SUPERLATTICE AVALANCHE PHOTODETECTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

TEMKIN, H ;

PANISH, MB ;

CHU, SNG .

APPLIED PHYSICS LETTERS, 1986, 49 (14) :859-861

[8] HIGH QUANTUM EFFICIENCY, HIGH-POWER, MODULATION DOPED GAINAS STRAINED-LAYER QUANTUM WELL LASER-DIODES EMITTING AT 1.5-MU-M [J].

THIJS, PJA ;

VANDONGEN, T .

ELECTRONICS LETTERS, 1989, 25 (25) :1735-1737

[9] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT ;

SCHUBERT, EF .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :220-222

[10] GAINAS/INP QUANTUM-WELLS AND STRAINED-LAYER SUPERLATTICES GROWN BY CHEMICAL BEAM EPITAXY [J].

UCHIDA, TK ;

UCHIDA, T ;

YOKOUCHI, N ;

KOYAMA, F ;

IGA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (2B) :L228-L230