IN0.53GA0.47AS/INP MULTIQUANTUM WELL LASERS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY (MOMBE)

被引：6

作者：

SUGIURA, H

NOGUCHI, Y

IGA, R

YAMADA, T

YASAKA, H

机构：

[1] NTT Opto-electronics Laboratories, Atsugi-Shi, Kanagawa, 243-01, 3-1, Morinosato Wakamiya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 2B期

关键词：

INGAAS/INP MQW; LASER; MOMBE; DCPBH; CW OPERATION;

D O I：

10.1143/JJAP.30.L286

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Double-channel planar buried-heterostructure lasers with a multi-quantum well active layer are fabricated by a combination of MOMBE and liquid-phase epitaxy. The lasers exhibit room temperature cw operation at a threshold current of 30 mA and emit at a wavelength of 1.57-mu-m. The threshold currents of 70% of the laser chips tested are in the range of 30-35 mA. An originally designed MOMBE system with a diffusion-pumped growth chamber is also described.

引用

页码：L286 / L288

页数：3

共 13 条

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