AR ION LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS

[1] CHARACTERISTICS OF LASER METALORGANIC VAPOR-PHASE EPITAXY IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3131 - 3135

[2] LASER-INDUCED HOMOEPITAXIAL GROWTH OF GALLIUM-ARSENIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1243 - 1245

[3] Davies G. J., 1988, Chemtronics, V3, P3

[4] DOI A, 1988, JPN J APPL PHYS 1, V27, P795, DOI 10.1143/JJAP.27.795

[5] LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (13) : 1065 - 1067

[6] ALGAAS MULTIPLE-WAVELENGTH LIGHT-EMITTING BAR GROWN BY LASER-ASSISTED METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1499 - 1501

[7] DIRECT WRITING OF GAAS MONOLAYERS BY LASER-ASSISTED ATOMIC LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (14) : 1144 - 1146

[8] THE ULTRAVIOLET-ABSORPTION SPECTRA OF SELECTED ORGANOMETALLIC COMPOUNDS USED IN THE CHEMICAL VAPOR-DEPOSITION OF GALLIUM-ARSENIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 84 (02) : 253 - 258

[9] TEMPERATURE DISTRIBUTIONS PRODUCED IN SEMICONDUCTORS BY A SCANNING ELLIPTICAL OR CIRCULAR CW LASER-BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 274 - 279

[10] CADMIUM DEPOSITION ON TRANSPARENT SUBSTRATES BY LASER-INDUCED DISSOCIATION OF CD(CH3)2 AT VISIBLE WAVELENGTHS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (03): : 133 - 138

[1] CHARACTERISTICS OF LASER METALORGANIC VAPOR-PHASE EPITAXY IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3131 - 3135

[2] LASER-INDUCED HOMOEPITAXIAL GROWTH OF GALLIUM-ARSENIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1243 - 1245

[3] Davies G. J., 1988, Chemtronics, V3, P3

[4] DOI A, 1988, JPN J APPL PHYS 1, V27, P795, DOI 10.1143/JJAP.27.795

[5] LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS [J]. APPLIED PHYSICS LETTERS, 1988, 52 (13) : 1065 - 1067

[6] ALGAAS MULTIPLE-WAVELENGTH LIGHT-EMITTING BAR GROWN BY LASER-ASSISTED METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1988, 52 (18) : 1499 - 1501

[7] DIRECT WRITING OF GAAS MONOLAYERS BY LASER-ASSISTED ATOMIC LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1988, 52 (14) : 1144 - 1146

[8] THE ULTRAVIOLET-ABSORPTION SPECTRA OF SELECTED ORGANOMETALLIC COMPOUNDS USED IN THE CHEMICAL VAPOR-DEPOSITION OF GALLIUM-ARSENIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 84 (02) : 253 - 258

[9] TEMPERATURE DISTRIBUTIONS PRODUCED IN SEMICONDUCTORS BY A SCANNING ELLIPTICAL OR CIRCULAR CW LASER-BEAM [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 274 - 279

[10] CADMIUM DEPOSITION ON TRANSPARENT SUBSTRATES BY LASER-INDUCED DISSOCIATION OF CD(CH3)2 AT VISIBLE WAVELENGTHS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (03): : 133 - 138