THE MECHANISM OF THE ANODIC-OXIDATION OF SILICON IN ACIDIC FLUORIDE SOLUTIONS REVISITED

被引：110

作者：

GERISCHER, H

ALLONGUE, P

KIELING, VC

机构：

[1] CNRS,UPR 15,F-75005 PARIS,FRANCE

[2] UFRGS,CORROSAO & PROTECAO METAIS LAB,BR-90000 PORTO ALEGRE,RS,BRAZIL

来源：

BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 1993年 / 97卷 / 06期

关键词：

ELECTROCHEMISTRY; ETCHING; INTERFACES; SEMICONDUCTORS;

D O I：

10.1002/bbpc.19930970602

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The present experience of the electrochemical dissolution of silicon and previous assumptions upon the mechanism are briefly reviewed. A new model is developed which explains how the coverage of the surface by hydrogen can be maintained in spite of the continuous anodic dissolution.

引用

页码：753 / 756

页数：4

共 39 条

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