FREQUENCY-RESPONSE OF THE STRONG INVERSION LAYER IN A SILICON-WAFER

被引：6

作者：

MUNAKATA, C

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1983年 / 22卷 / 12期

关键词：

D O I：

10.1143/JJAP.22.1893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1893 / 1896

页数：4

共 12 条

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[5]

GROVE AS, 1967, PHYS TECHNOL S, pCH10

[6]

GROVE AS, 1967, PHYS TECHNOL S, pCH9

[7] PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER [J].

HOFSTEIN, SR ;

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SOLID-STATE ELECTRONICS, 1965, 8 (03) :321-+

[8] FREQUENCY RESPONSE OF SURFACE INVERSION LAYER IN SILICON [J].

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[9] IMPEDANCE OF SEMICONDUCTOR-INSULATOR-METAL CAPACITORS [J].

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[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

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BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

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