CDTE-INSB HETEROSTRUCTURES GROWN BY ORGANOMETALLIC-VAPOR-PHASE EPITAXY - PREPARATION AND ELECTRICAL-PROPERTIES

This paper describes the electrical properties of CdTe-InSb heterostructures. These were grown by organometallic-vapor-phase epitaxy of CdTe on InSb substrates, over a wide range of temperatures and reactant partial pressures. Layers are characterized by photoluminescence measurements at 77 K and by investigating the behavior of Au-CdTe Schottky barrier diodes. It is shown that growth of CdTe and InSb substrates results in material with superior electrical and photoluminescence properties than that grown directly on CdTe substrates. This improvement has been attributed to the superior quality of InSb over CdTe as a starting substrate material. Au-CdTe Schottky barriers on these layers resulted in diodes with an ideality factor of approximately 1. 1 and barrier height of 0. 75 ev. These results are comparable to the characteristics of the devices fabricated on the best bulk CdTe materials.