CHLORIDE MULTISOURCE EPITAXIAL-GROWTH OF CUGAS2 AND CUGASE2

被引：13

作者：

MATSUMOTO, T

MIYAJI, Y

KIUCHI, K

KATO, T

机构：

[1] Department of Electronic Engineering, Yamanashi University, Kofu, 400

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

CHALCOPYRITE SEMICONDUCTOR; CUGAS(2); CUGASE(2); EPITAXIAL GROWTH; CHLORIDE EPITAXY;

D O I：

10.7567/JJAPS.32S3.142

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel epitaxial growth technique-chloride multisource epitaxial growth-for ternary compounds is described. Beams of the source vapors, CuCl, Ga and S (Se), are supplied into a high-purity nitrogen or hydrogen atmosphere of 10(-4) Torr. The c-axis epitaxial growths Of CuGaS2 and CuGaSe2 are attained on GaAs (100) substrates at 600-620-degrees-C. The effects of the CuCl/Ga supply ratio on the layer growth are examined. The epitaxial layers are strained compressively along the c-axis by the thermal expansion mismatch between the grown layer and the substrate.

引用

页码：142 / 144

页数：3

共 4 条

[1] CHEMICAL VAPOR-DEPOSITION OF CUGAS2 USING CHLORIDE SOURCES [J].

MATSUMOTO, T ;

NAKANISHI, H ;

ISHIDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08) :L1263-L1265

[2] TOWARD EPITAXIAL-GROWTH OF CUGAS2 ON GAAS(001) SUBSTRATES BY CHLORIDE CHEMICAL VAPOR-DEPOSITION [J].

PU, YS ;

KATO, T ;

MATSUMOTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (10) :3420-3421

[3] TEMPERATURE-DEPENDENCE OF TETRAGONAL DISTORTION AND CRYSTAL-FIELD SPLITTING IN CUGAS2 [J].

YAMAMOTO, N ;

HORINAKA, H ;

MIYAUCHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (02) :255-259

[4] VAPOR-PHASE EPITAXY OF CUGAS2 USING METAL CHLORIDES AND H2S SOURCES [J].

YAMAUCHI, A ;

SAITO, H ;

KINTO, H ;

IIDA, S .

JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) :752-756

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