GROWTH MECHANISMS OF BI2SR2CUO6 FILMS DEPOSITED BY SEQUENTIALLY IMPOSED LAYER EPITAXY

被引：1

作者：

XU, XZ

TEBBJI, H

MAIRET, V

HATTERER, C

HASS, N

CAVELLIN, CD

LAGUES, M

机构：

[1] CNRS UPR5 - E.S.P.C.I., 75231 Paris

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 92卷 / 05期

关键词：

SYNTHESIS OF; BI2SR2CUO6; STRUCTURE OF; THIN FILMS; MBE;

D O I：

10.1016/0038-1098(94)90525-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Sequentially Imposed Layer Epitaxy (SILE) process is used to deposit Bi2Sr2CuO6 thin films on SrTiO3 and MgO single crystals. The deposition sequence is completely controlled by the oscillations of the diffracted intensity of high energy electrons (RHEED). This study leads to the evaluation of the sticking probabilities of all the metal elements included. We propose growth mechanisms to interpret these results. Using optimal deposition parameters, stoichiometric films are obtained, withe orientation perpendicular to the substrate surface, and a typical roughness of +/- 5 Angstrom.

引用

页码：443 / 447

页数：5

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