IN-SITU MONITORING OF INTERFACE FORMATION USING THE PHASE-SHIFT OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS

被引：11

作者：

BRAUN, W ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1995年 / 60卷 / 05期

关键词：

D O I：

10.1007/BF01538767

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel phase shift of Reflection High-Energy Electron Diffraction (RHEED) intensity oscillations during heterointerface formation allows direct monitoring of segregation at GaAs/AlxGa1-xAs interfaces. The effect should be applicable to other materials systems as it is due to the reconfiguration of the surface structure at the heterointerface.

引用

页码：441 / 446

页数：6

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