SI WAFER BONDING WITH TA SILICIDE FORMATION

被引：2

作者：

FUKURODA, A

SUGII, T

ARIMOTO, Y

ITO, T

机构：

[1] Fujitsu Laboratories Ltd., Atsugi, 243-01, Morinosato-Wakamiya

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 10A期

关键词：

SI; TA; SILICIDE; SOI; WAFER BONDING; SIMS;

D O I：

10.1143/JJAP.30.L1693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bonded SOI wafers with a Ta silicide layer are fabricated. The 0.08-mu-m-thick Ta film sputtered on an oxidized Si wafer is bonded to another Si wafer with a native oxide. When the wafers are uniformly bonded by pulse-field-assisted bonding, Ta silicide forms at the interface. The buried Ta silicide layer is 0.12-mu-m thick and the sheet resistance is 9 OMEGA/open-square-box. From a SIMS analysis, Ta decreases rapidly in Si. This proves that a pure SOI layer for devices can be obtained.

引用

页码：L1693 / L1695

页数：3

共 9 条

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