CHARACTERIZATION OF CDTE FOR HGCDTE SURFACE PASSIVATION

被引：34

作者：

BUBULAC, LO ^{[1
]}

TENNANT, WE ^{[1
]}

BAJAJ, J ^{[1
]}

SHENG, J ^{[1
]}

BRIGHAM, R ^{[1
]}

VANDERWYCK, AHB ^{[1
]}

ZANDIAN, M ^{[1
]}

MCLEVIGE, WV ^{[1
]}

机构：

[1] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 09期

关键词：

ATOMIC FORCE MICROSCOPY; CDTE PASSIVATION; HGCDTE; MOLECULAR BEAM EPITAXY (MBE); SECONDARY ION MASS SPECTROMETRY (SIMS);

D O I：

10.1007/BF02653071

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The objectives of this work are to study the physical and chemical structure of CdTe films using secondary ion mass spectrometry (SIMS) and atomic force microscopy (AFM) and to demonstrate the usefulness of these analytical techniques in determining the characteristics of CdTe-passivation films deposited by different techniques on HgCdTe material. Three key aspects of CdTe passivation of HgCdTe are addressed by different analytical tools: a) morphological microstructure of CdTe films examined by atomic force microscopy; b) compositional profile across the interface determined by Matrix (Te)-SIMS technique; c) concentration of various impurities across the CdTe/HgCdTe structure profiled by secondary ion-mass spectrometry.

引用

页码：1175 / 1182

页数：8

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