PHOTOELECTROCHEMICAL PROPERTIES OF TYPE-P AND TYPE-N TUNGSTEN DISULFIDE

被引：8

作者：

DOUAY, V

GOROCHOV, O

机构：

来源：

JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE | 1986年 / 83卷 / 04期

关键词：

D O I：

10.1051/jcp/1986830247

中图分类号：

Q5 [生物化学]; Q7 [分子生物学];

学科分类号：

071010 ; 081704 ;

摘要：

引用

页码：247 / 254

页数：8

共 23 条

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[7]

DOUAY V, UNPUB MAT RES B

[8] THE RESPONSE OF THE N-MOSE2/L-M H2SO4 INTERFACE TO PHOTOINDUCED HOLES AT LOW AND HIGH LIGHT INTENSITIES IN THE ABSENCE AND PRESENCE OF FE(CN)64- SPECIES [J].

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