REALISTIC MODELING OF THE ELECTRONIC-PROPERTIES OF DOPED AMORPHOUS-SILICON

被引：6

作者：

HACK, M

STREET, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.100028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1083 / 1085

页数：3

共 12 条

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[2]

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[6] THERMAL-EQUILIBRIUM DEFECT PROCESSES IN HYDROGENATED AMORPHOUS-SILICON [J].

SMITH, ZE ;

ALJISHI, S ;

SLOBODIN, D ;

CHU, V ;

WAGNER, S ;

LENAHAN, PM ;

ARYA, RR ;

BENNETT, MS .

PHYSICAL REVIEW LETTERS, 1986, 57 (19) :2450-2453

[7] BAND TAILS, ENTROPY, AND EQUILIBRIUM DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

SMITH, ZE ;

WAGNER, S .

PHYSICAL REVIEW LETTERS, 1987, 59 (06) :688-691

[8] HYDROGEN DIFFUSION IN AMORPHOUS-SILICON [J].

STREET, RA ;

TSAI, CC ;

KAKALIOS, J ;

JACKSON, WB .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 56 (03) :305-320

[9] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON [J].

STREET, RA .

PHYSICAL REVIEW LETTERS, 1982, 49 (16) :1187-1190

[10] THERMAL-EQUILIBRIUM PROCESSES IN AMORPHOUS-SILICON [J].

STREET, RA ;

KAKALIOS, J ;

TSAI, CC ;

HAYES, TM .

PHYSICAL REVIEW B, 1987, 35 (03) :1316-1333

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