DEFECT-CONTROLLED CONDUCTIVITY IN AS2SE3 SINGLE-CRYSTALS

被引:7
作者
BRUNST, G
WEISER, G
机构
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1985年 / 51卷 / 01期
关键词
D O I
10.1080/01418618508242767
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:67 / 77
页数:11
相关论文
共 27 条
[1]   PHOTOELECTRONIC BEHAVIOR OF A-SE AND SOME A-SE - AS ALLOYS IN THEIR GLASS-TRANSITION REGIONS [J].
ABKOWITZ, M ;
PAI, DM .
PHYSICAL REVIEW B, 1978, 18 (04) :1741-1750
[2]   STUDIES OF THE FINE-STRUCTURE OF THE DIRECT GAP OF AS2SE3 SINGLE-CRYSTALS BY ELECTROREFLECTANCE [J].
ALTHAUS, HL ;
WEISER, G .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (02) :537-545
[3]   ELECTROABSORPTION ON THE INDIRECT GAP OF AS2SE3 [J].
ALTHAUS, HL ;
WEISER, G .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 99 (01) :277-284
[4]   OPTICAL-SPECTRA AND BAND-STRUCTURE OF AS2SE3 [J].
ALTHAUS, HL ;
WEISER, G ;
NAGEL, S .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 87 (01) :117-128
[5]   MODEL FOR ELECTRONIC-STRUCTURE OF AMORPHOUS-SEMICONDUCTORS [J].
ANDERSON, PW .
PHYSICAL REVIEW LETTERS, 1975, 34 (15) :953-955
[6]   PHOTODECOMPOSITION OF AMORPHOUS AS2SE3 AND AS2S3 [J].
BERKES, JS ;
ING, SW ;
HILLEGAS, WJ .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4908-&
[7]  
BRUNST G, 1984, THESIS U MARBURG FR
[8]   ELECTRONIC-STRUCTURE OF ARSENIC CHALCOGENIDES [J].
BULLETT, DW .
PHYSICAL REVIEW B, 1976, 14 (04) :1683-1692
[9]   CRYSTAL STRUCTURE OF TRIGONAL SELENIUM [J].
CHERIN, P ;
UNGER, P .
INORGANIC CHEMISTRY, 1967, 6 (08) :1589-&
[10]  
GOSH B, 1983, PROG CRYSTAL GROWTH, V6, P393