DETERMINATION OF STOICHIOMETRY OF SIOX THIN-FILMS USING AN AUGER PARAMETER

被引：18

作者：

ALFONSETTI, R

LOZZI, L

PASSACANTANDO, M

PICOZZI, P

SANTUCCI, S

机构：

[1] Dipartimento di Fisica, Università degli Studi di L'Aquila, 67010 Coppito, AQ

来源：

THIN SOLID FILMS | 1992年 / 213卷 / 02期

关键词：

D O I：

10.1016/0040-6090(92)90276-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

收藏

页码：158 / 159

页数：2

相关论文

共 15 条

[11] SEAH MP, 1983, PRACTICAL SURFACE AN, P181
[12] FORMATION OF LOW DEFECT DENSITY SIOX FILMS FOR JOSEPHSON INTEGRATED-CIRCUITS
SHIBAYAMA, H
HASUO, S
YAMAOKA, T
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 429 - 430
[13] THOMAS JH, 1985, J VAC SCI TECHNOL A, V3
[14] 2-DIMENSIONAL CHEMICAL-STATE PLOTS - STANDARDIZED DATA SET FOR USE IN IDENTIFYING CHEMICAL-STATES BY X-RAY PHOTOELECTRON-SPECTROSCOPY
WAGNER, CD
GALE, LH
RAYMOND, RH
[J]. ANALYTICAL CHEMISTRY, 1979, 51 (04) : 466 - 482
[15] X-RAY PHOTOELECTRON-SPECTROSCOPY ON SURFACE OXIDATION OF SILICON BY SOME CLEANING PROCEDURES
WONG, CY
KLEPNER, SP
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1229 - 1230