STRUCTURAL AND MECHANICAL-PROPERTIES OF ION-IMPLANTED GAAS AND INP SINGLE-CRYSTALS GROWN BY THE LIQUID ENCAPSULATED CZOCHRALSKI TECHNIQUE

被引:8
作者
AROKIARAJ, J
ARULKUMARAN, S
UDHAYSANKAR, M
SANTHANARAGHAVAN, P
KUMAR, J
RAMASAMY, P
NAIR, KGM
MAGUDAPATHY, P
THAMPI, NS
KRISHAN, K
机构
[1] ANNA UNIV,CTR CRYSTAL GROWTH,MADRAS 600025,TAMIL NADU,INDIA
[2] INDIRA GANDHI CTR ATOM RES,DIV MAT SCI,KALPAKKAM 603102,TAMIL NADU,INDIA
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期
关键词
GALLIUM ARSENIDE; ION IMPLANTATION; INDIUM PHOSPHIDE; SEMICONDUCTORS;
D O I
10.1016/0921-5107(94)90106-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ion implantation studies were carried out on liquid encapsulated Czochralski grown GaAs and InP single crystals. The hardness of samples irradiated at varying dosages was studied. The irradiated samples were characterized structurally by etching studies and electrically by I-V measurements. Double-crystal X-ray diffractometry was used to study the damage caused by ion implantation.
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页码:461 / 464
页数:4
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