DEFORMED LAYERS OBSERVED AT INTERFACE BETWEEN A SN-DOPED EPITAXIAL LAYER AND A CR-DOPED SUBSTRATE IN GAAS

被引：6

作者：

KASANO, H ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,TOKYO,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.323065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2882 / 2888

页数：7

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