ELECTRON TRAPS AND POSITIVE DLTS SIGNALS IN VPE GAAS-MESFETS

被引：3

作者：

GHEZZI, C

GOMBIA, E

MOSCA, R

PILLAN, M

机构：

[1] CNR,IST MASPEC,I-43100 PARMA,ITALY

[2] TELETTRA SPA,I-20059 VIMERCATE,ITALY

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 48卷 / 05期

关键词：

D O I：

10.1007/BF00619718

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：457 / 463

页数：7

共 13 条

[1]

ALDERSTEIN MG, 1976, ELECTRON LETT, V12, P297

[2] SURFACE INFLUENCE ON THE CONDUCTANCE DLTS SPECTRA OF GAAS-MESFETS [J].

BLIGHT, SR ;

WALLIS, RH ;

THOMAS, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (10) :1447-1453

[3] TRANSIENT CAPACITANCE MEASUREMENTS ON RESISTIVE SAMPLES [J].

BRONIATOWSKI, A ;

BLOSSE, A ;

SRIVASTAVA, PC ;

BOURGOIN, JC .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :2907-2910

[4]

GHEZZI C, 1987, 17TH EUR SOL STAT DE, P859

[5] CONDUCTANCE TRANSIENT SPECTROSCOPY OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

HARRANG, JP ;

TARDELLA, A ;

ROSSO, M ;

ALNOT, P ;

PERAY, JF .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1931-1936

[6] CAPACITANCE AND CONDUCTANCE DEEP LEVEL TRANSIENT SPECTROSCOPY IN FIELD-EFFECT TRANSISTORS [J].

HAWKINS, ID ;

PEAKER, AR .

APPLIED PHYSICS LETTERS, 1986, 48 (03) :227-229

[7] STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J].

ITOH, T ;

YANAI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1037-1045

[8]

MADDEN J, 1987, 17TH EUR SOL STAT DE, P885

[9] MANIFESTATIONS OF DEEP LEVELS POINT-DEFECTS IN GAAS [J].

MARTIN, GM ;

MAKRAMEBEID, S .

PHYSICA B & C, 1983, 116 (1-3) :371-383

[10]

MITONNEAU A, 1981, I PHYS C SER, V56, P445

← 1 2 →