EXCITONIC OPTICAL NONLINEARITIES AND TRANSPORT IN THE LAYERED COMPOUND SEMICONDUCTOR GASE

被引:13
作者
MIZEIKIS, V
LYSSENKO, VG
ERLAND, J
HVAM, JM
机构
[1] TECH UNIV DENMARK,CTR MIKROELEKTR,DK-2800 LYNGBY,DENMARK
[2] VILNIUS STATE UNIV,DEPT SOLID STATE ELECTR,VILNIUS 2054,LITHUANIA
[3] CHERNOGOLOVKA MICROELECTR TECHNOL & SUPERPURE MAT,CHERNOGOLOVKA 142432,RUSSIA
[4] ODENSE UNIV,INST FYS,DK-5230 ODENSE M,DENMARK
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 23期
关键词
D O I
10.1103/PhysRevB.51.16651
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dephasing and transient grating experiments in the direct excitonic absorption region of GaSe at low temperatures show that a fast relaxation within the one-dimensionally disordered excitonic band results in band filling being the dominant mechanism of the optical nonlinearity. Correspondingly, we observe a blueshift of the nonlinear signal with excitation density. The temperature dependence of the exciton diffusion constant measured in directions parallel to the GaSe layer planes indicates that temperature-independent scattering (trapping) and scattering by acoustic phonons determine the exciton mobility at low temperatures. © 1995 The American Physical Society.
引用
收藏
页码:16651 / 16659
页数:9
相关论文
共 18 条
  • [1] RADIATIVE LIFETIME OF FREE-EXCITONS IN QUANTUM-WELLS
    ANDREANI, LC
    TASSONE, F
    BASSANI, F
    [J]. SOLID STATE COMMUNICATIONS, 1991, 77 (09) : 641 - 645
  • [2] EXCITON-CARRIER SCATTERING IN GALLIUM SELENIDE
    CAPOZZI, V
    PAVESI, L
    STAEHLI, JL
    [J]. PHYSICAL REVIEW B, 1993, 47 (11): : 6340 - 6349
  • [3] THERMALIZATION OF PHOTOEXCITED LOCALIZED EXCITONS IN GASE SAMPLES WITH STACKING DISORDER
    CAPOZZI, V
    MASCHKE, K
    [J]. PHYSICAL REVIEW B, 1986, 34 (06) : 3924 - 3931
  • [4] Eichler H. J., 1986, SPRINGER SERIES OPTI, V50, P256
  • [5] SPECTRALLY RESOLVED 4-WAVE-MIXING IN SEMICONDUCTORS - INFLUENCE OF INHOMOGENEOUS BROADENING
    ERLAND, J
    PANTKE, KH
    MIZEIKIS, V
    LYSSENKO, VG
    HVAM, JM
    [J]. PHYSICAL REVIEW B, 1994, 50 (20): : 15047 - 15055
  • [6] EXCITON DIFFUSION IN CDSE
    ERLAND, J
    RAZBIRIN, BS
    PANTKE, KH
    LYSSENKO, VG
    HVAM, JM
    [J]. PHYSICAL REVIEW B, 1993, 47 (07): : 3582 - 3587
  • [7] FIVAZ RC, 1976, PHYSICS CHEM MATERIA, V4, P343
  • [8] INFLUENCE OF STACKING DISORDER ON WANNIER EXCITONS IN LAYERED SEMICONDUCTORS
    FORNEY, JJ
    MASCHKE, K
    MOOSER, E
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (11): : 1887 - 1894
  • [9] HASEGAWA A, 1992, J LUMIN, V53, P371
  • [10] HVAM JM, 1989, OPTICAL SWITCHING LO, P233