DOUBLE POLYSILICON PLATE CAPACITORS WITH OXIDE NITRIDE INSULATOR

被引:2
作者
GILDENBLAT, G
GHEZZO, M
NORTON, J
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D O I
10.1049/el:19820025
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:34 / 36
页数:3
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共 6 条
[1]   MOS SWITCHED-CAPACITOR FILTERS [J].
BRODERSEN, RW ;
GRAY, PR ;
HODGES, DA .
PROCEEDINGS OF THE IEEE, 1979, 67 (01) :61-75
[2]   HIGH-DENSITY CID IMAGERS [J].
BROWN, DM ;
GHEZZO, M ;
SARGENT, PL .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) :79-84
[3]   MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE [J].
DUN, H ;
PAN, P ;
WHITE, FR ;
DOUSE, RW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1555-1563
[4]  
GREGOR LV, 1969, THIN FILM DIELECTRIC
[5]   DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON .1. MEASUREMENT AND INTERPRETATION [J].
OSBURN, CM ;
ORMOND, DW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :591-+
[6]  
TAFT EA, 1971, J ELECTROCHEM SOC, V118, P1243