17 PS RISE-TIME MEASUREMENT BY PHOTOEMISSION SAMPLING

[1] PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 101 - 103

[2] BEHA H, 1986, Patent No. 180780

[3] HIGH-SPEED CIRCUIT MEASUREMENTS USING PHOTOEMISSION SAMPLING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 226 - 228

[4] CLAUBERG R, 1986, 1986 P HIGH SPEED EL

[5] CLAUBERG R, IN PRESS MICROFIELDS

[6] MEASUREMENT OF REAL-TIME DIGITAL SIGNALS IN A SILICON BIPOLAR JUNCTION TRANSISTOR USING A NONINVASIVE OPTICAL PROBE [J]. ELECTRONICS LETTERS, 1986, 22 (12) : 650 - 652

[7] KASH JA, IN PRESS SYNCHRONOUS

[8] HIGH-SPEED ELECTRICAL SAMPLING BY FS PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (06) : 357 - 359

[9] PICOSECOND ELECTROOPTIC SAMPLING SYSTEM [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 211 - 212

[1] PICOSECOND OPTOELECTRONIC SWITCHING AND GATING IN SILICON [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 101 - 103

[2] BEHA H, 1986, Patent No. 180780

[3] HIGH-SPEED CIRCUIT MEASUREMENTS USING PHOTOEMISSION SAMPLING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (04) : 226 - 228

[4] CLAUBERG R, 1986, 1986 P HIGH SPEED EL

[5] CLAUBERG R, IN PRESS MICROFIELDS

[6] MEASUREMENT OF REAL-TIME DIGITAL SIGNALS IN A SILICON BIPOLAR JUNCTION TRANSISTOR USING A NONINVASIVE OPTICAL PROBE [J]. ELECTRONICS LETTERS, 1986, 22 (12) : 650 - 652

[7] KASH JA, IN PRESS SYNCHRONOUS

[8] HIGH-SPEED ELECTRICAL SAMPLING BY FS PHOTOEMISSION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (06) : 357 - 359

[9] PICOSECOND ELECTROOPTIC SAMPLING SYSTEM [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 211 - 212