THE OMVPE GROWTH OF GAAS AND GAALAS ON A LARGE-SCALE

[1] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 228 - 230

[2] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23

[3] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[4] GILLING LJ, 1981, 8 P INT C CVD, P199

[5] LOW-THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM VPE [J]. ELECTRONICS LETTERS, 1982, 18 (14) : 618 - 620

[6] HERSEE SD, UNPUB ANN REV MATERI, V12

[7] SCIFRES DR, 1982, UNPUB APPLIED PHYSIC

[8] METALORGANIC CVD OF GAAS IN A MOLECULAR-BEAM SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 30 - 34

[1] LOW THRESHOLD, HIGH-EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 228 - 230

[2] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23

[3] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[4] GILLING LJ, 1981, 8 P INT C CVD, P199

[5] LOW-THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM VPE [J]. ELECTRONICS LETTERS, 1982, 18 (14) : 618 - 620

[6] HERSEE SD, UNPUB ANN REV MATERI, V12

[7] SCIFRES DR, 1982, UNPUB APPLIED PHYSIC

[8] METALORGANIC CVD OF GAAS IN A MOLECULAR-BEAM SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 30 - 34