LOW-FREQUENCY NOISE IN GALLIUM-ARSENIDE MESFETS

[1] CHEN H, IN PRESS

[2] SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 287 - +

[3] DEEP-LEVEL ANALYSIS IN (ALGA)AS-GAAS 2-D ELECTRON-GAS DEVICES BY MEANS OF LOW-FREQUENCY NOISE MEASUREMENTS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (01) : 9 - 11

[4] PECZALSKI A, IN PRESS

[5] PECZALSKI A, 1982, THESIS U MINNESOTA

[6] SANTEREAN JF, 1981, 11TH P EUR MICR C

[7] VANDENZIEL A, 1976, NOISE MEASUREMENTS

[8] NOISE IN SOLID-STATE DEVICES AND LASERS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08): : 1178 - +

[9] VANDERZIEL A, 1979, ADV ELECTRONICS ELEC, V49

[10] VINER J, 1969, THESIS U MINNESOTA

[1] CHEN H, IN PRESS

[2] SURFACE-STATE RELATED L/F NOISE IN P-N JUNCTIONS AND MOS TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1968, 12 (09) : 287 - +

[3] DEEP-LEVEL ANALYSIS IN (ALGA)AS-GAAS 2-D ELECTRON-GAS DEVICES BY MEANS OF LOW-FREQUENCY NOISE MEASUREMENTS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (01) : 9 - 11

[4] PECZALSKI A, IN PRESS

[5] PECZALSKI A, 1982, THESIS U MINNESOTA

[6] SANTEREAN JF, 1981, 11TH P EUR MICR C

[7] VANDENZIEL A, 1976, NOISE MEASUREMENTS

[8] NOISE IN SOLID-STATE DEVICES AND LASERS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08): : 1178 - +

[9] VANDERZIEL A, 1979, ADV ELECTRONICS ELEC, V49

[10] VINER J, 1969, THESIS U MINNESOTA